, which develops chips for digital communications and convergence products, today released two new 40 Gbps Electroabsorption (EA) modulators and outlined its strategy for the developing 40 Gbps marketplace.
Designed especially for OC-768-based fiber optic networks, the OM5653C-30B and OM5753C-30B EA modulators feature a Gallium Indium Arsenide Phosphide (GaInAsP) compound semiconductor, providing a cost-effective, hi-performance, low power solution for customers who are ramping up to 40 Gbps network infrastructures.
The OM5653C-30B and OM5753C-30B are designed specifically for OC-768 DWDM fiber applications, and are available at carrier rates of up to 40 Gbps, both in metro and long-haul network environments. By incorporating a new GaInAsP process into the design, Oki has delivered EA modulators that are more compact, have simpler drive design, lower operating voltages of 2.5 Vpp, operate over a data rate from 40 Gbps to 43 Gbps (with FEC), and have a good extinction ratio compared to Lithium Niobate (LN) modulators.
Features of the OM5653C-30B and OM5753C-30B include:
- Low chirp: <0.5
- 40 Gbps NRZ operation
- High modulation bandwidth: > 30 GHz (-3 dBe)
- High extinction ratio: > 17dB (CW, 0 to -4V)
- Built-in DC bias circuit* (OM5753C - 30B)
- Built-in thermoelectric cooler (TEC)
- Low power consumption
- Hermetic sealed package
Samples of Oki Semiconductor's OM5653C-30B and OM5753C-30B are available now. More information about Oki Semiconductor's Optical Component solutions can be found at: www.okisemi.com .
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